Title :
Magnetic-Field Area Sensor Using Poly-Si Micro Hall Devices
Author :
Yamaguchi, Yohei ; Hashimoto, Hayami ; Kimura, Mutsumi ; Hirako, Masaaki ; Yamaoka, Toshifumi ; Tani, Satoshi
Author_Institution :
Dept. of Electron. & Inf., Ryukoku Univ., Otsu, Japan
Abstract :
In this letter, a magnetic-field area sensor using poly-Si micro Hall devices is reported. A matrix array of Hall devices is formed on a glass substrate using fabrication processes compatible with poly-Si thin-film transistors. Here, 3 × 3 Hall devices are arrayed every 1 × 1 mm, and the dimension of the principal part is less than 50 × 50 μm. A compensation technique of the characteristic variation is used, and it is confirmed that the area sensing is correctly conducted. This sensor presents a novel application using thin-film technologies for giant-micro flexible electronics.
Keywords :
flexible electronics; magnetic sensors; matrix algebra; thin film transistors; fabrication process; giant-micro flexible electronics; magnetic-field area sensor; matrix array; micro Hall devices; thin-film transistors; Amorphous magnetic materials; Arrays; Magnetic devices; Sensors; Silicon; Transistors; Area sensor; Hall device; flexible electronics; giant-micro electronics; magnetic field; poly-Si; thin-film transistor (TFT);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2068271
