Title :
Experimental Demonstration of Capacitorless A2RAM Cells on Silicon-on-Insulator
Author :
Rodriguez, Noel ; Navarro, Carlos ; Gamiz, Francisco ; Andrieu, François ; Faynot, Olivier ; Cristoloveanu, Sorin
Author_Institution :
Dept. of Electron., Univ. of Granada, Granada, Spain
Abstract :
We report the fabrication and characterization of A2RAM capacitorless memory cell on silicon-on-insulator (SOI). Holes and electrons are separated in two superposed p- and n-channel regions. The retrograde p-n doping in a 36-nm-thick body has been successfully tailored by epitaxial regrowth, without any alteration of the CMOS/SOI process. We document the detailed device operation and its attractive performance in terms of current margin, retention time, and variability.
Keywords :
epitaxial growth; random-access storage; semiconductor doping; silicon-on-insulator; A2RAM capacitorless memory cell; SOI; current margin; device operation; epitaxial regrowth; n-channel regions; p-channel regions; retention time; retrograde p-n doping; silicon-on-insulator; size 36 nm; DRAM chips; Doping; Fabrication; Junctions; Random access memory; Silicon on insulator technology; 1T-DRAM; A2RAM; DRAM; capacitorless; silicon-on-insulator (SOI);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2221074
