Title :
In-Plane Gate Transistors Fabricated by Using Atomic Force Microscopy Anode Oxidation
Author :
Chung, Tung-Hsun ; Chen, Shu-Han ; Liao, Wen-Hsuan ; Lin, Shih-Yen
Author_Institution :
Res. Center for Appl. Sci., Acad. Sinica, Taipei, Taiwan
Abstract :
An in-plane gate transistor fabricated by using the atomic force microscopy (AFM) lithography is investigated in this letter. By performing repeated oxidation and deoxidation procedures by using the AFM for four times, two V-shaped trenches are fabricated on the prepatterned mesas to isolate the electrical terminals of the device. Without exposing the channel region to the atmosphere, the device has exhibited standard transistor current-voltage characteristics in the 0-5 V range at room temperature, which may be advantageous for the future high-speed application of the device.
Keywords :
atomic force microscopy; insulated gate field effect transistors; isolation technology; lithography; atomic force microscopy anode oxidation; atomic force microscopy lithography; channel region; deoxidation procedure; electrical terminal; in plane gate transistor; prepatterned mesa; temperature 293 K to 298 K; voltage 0 V to 5 V; Gallium arsenide; Lithography; Logic gates; Microscopy; Oxidation; Resistance; Transistors; Atomic force microscopy (AFM); in-plane gate transistors;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2068273
