Title :
Cu-Embedded AlN-Based Nonpolar Nonvolatile Resistive Switching Memory
Author :
Chen, Chao ; Gao, Shuang ; Tang, Guangsheng ; Song, Cheng ; Zeng, Fei ; Pan, Feng
Author_Institution :
Dept. of Mater. Sci. & Eng., Tsinghua Univ., Beijing, China
Abstract :
This letter covers the fabrication of a nonpolar resistive switching (RS) random access memory device using Cu-embedded AlN and its reproducible RS characteristics. The AlN-based memory device shows endurance of >; 103, reliable retention time (ten years extrapolation at both room temperature and 85°C), and fast programming speed under 100-ns pulses in unipolar operation mode. The switching mechanism is believed to be mediated by the formation and rupture of conductive Cu filaments.
Keywords :
III-V semiconductors; aluminium compounds; copper; embedded systems; fracture; random-access storage; reliability; wide band gap semiconductors; Cu-AlN; IEEE nonpolar resistive switching random access memory device; conductive filament formation; conductive filament rupture; embedded AlN-based nonpolar nonvolatile resistive switching memory; fast programming speed; reliable retention time; temperature 293 K to 298 K; temperature 85 degC; time 100 ns; unipolar operation mode; Aluminum nitride; Annealing; Copper; Nonvolatile memory; Random access memory; Resistance; AlN; nonvolatile memory; resistance random access memory (RRAM); resistive switching (RS);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2220953
