DocumentCode
1335165
Title
Generalization and Reduction of Line-Series-Shunt Calibration for Broadband GaAs and CMOS On-Wafer Scattering Parameter Measurements
Author
Huang, Chien-Chang ; Chen, Yu-Chuan
Author_Institution
Dept. of Commun. Eng., Yuan Ze Univ., Taoyuan, Taiwan
Volume
60
Issue
12
fYear
2012
Firstpage
4138
Lastpage
4144
Abstract
This paper presents generalization and reduction of the line-series-shunt (LST) calibration technique, including generic parasitic treatments on the series/shunt standards and number reduction of calibration standards, for broadband GaAs and CMOS on-wafer scattering parameter (S-parameter) measurements. The series/shunt standards are modified with additional transmission-line (TL) sections on both the left and right sides to directly solve the five calibration parameters, namely, TL propagation constant, series impedance, shunt admittance, series parasitic admittance, and shunt parasitic impedance. This approach relaxes the constraint on the series/shunt standards that may not satisfy the plain lossy TL assumption in the parasitic evaluations. The calibration can be further reduced by only two standards if the lossy TL models for the series/shunt standards are satisfied. These points are examined by a microstrip test structure built on GaAs and CMOS technologies, with verification of an independent thru-reflect-line calibration.
Keywords
CMOS integrated circuits; III-V semiconductors; S-parameters; calibration; electric admittance; electric impedance; gallium arsenide; integrated circuit testing; microwave measurement; transmission lines; CMOS on-wafer scattering parameter measurement; CMOS technology; GaAs; LST calibration; S-parameter measurement; TL propagation constant; TL section; calibration parameter; calibration standard; generic parasitic treatment; line-series-shunt calibration; lossy TL model; microstrip test structure; microwave measurement; number reduction; parasitic evaluation; series impedance; series parasitic admittance; series/shunt standard; shunt admittance; shunt parasitic impedance; thru-reflect-line calibration; transmission-line section; CMOS integrated circuits; Calibration; Gallium arsenide; Mathematical model; Resistors; Calibrations; de-embedding; microwave measurement; on-wafer measurements; transmission-line (TL) elements;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.2012.2222921
Filename
6353611
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