DocumentCode :
1335860
Title :
Room temperature low-threshold CW operation of 1.23 μm GaAsSb VCSELs on GaAs substrates
Author :
Yamada, M. ; Anan, T. ; Kurihara, K. ; Nishi, K. ; Tokutome, K. ; Kamei, A. ; Sugou, S.
Author_Institution :
Opt. Interconnection NEC Lab., Real World Comput. Partnership, Ibaraki, Japan
Volume :
36
Issue :
7
fYear :
2000
fDate :
3/30/2000 12:00:00 AM
Firstpage :
637
Lastpage :
638
Abstract :
Room temperature (RT) continuous-wave (CW) operation of vertical-cavity surface-emitting lasers (VCSELs) with GaAsSb quantum wells on GaAs substrates has been demonstrated. A 6× 6 μm2 oxide-confined device exhibited RT-CW lasing with a threshold current of 0.7 mA at 1.23 μm, which is the longest reported wavelength of GaAs-based VCSELs yet reported
Keywords :
III-V semiconductors; gallium arsenide; quantum well lasers; surface emitting lasers; 0.7 mA; 1.23 micron; GaAs; GaAs substrate; GaAsSb; GaAsSb quantum well; oxide confined device; room temperature continuous wave operation; threshold current; vertical cavity surface emitting laser;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20000483
Filename :
842210
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1335860
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