DocumentCode
1335865
Title
Very low threshold current density operation of 1.5 μm DFB lasers with wire-like active regions
Author
Nakamura, M. ; Nunoya, N. ; Yasumoto, H. ; Morshed, M. ; Fukuda, K. ; Tamura, S. ; Arai, S.
Author_Institution
Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan
Volume
36
Issue
7
fYear
2000
fDate
3/30/2000 12:00:00 AM
Firstpage
639
Lastpage
640
Abstract
Very low threshold 1.5 μm-wavelength GaInAsP/InP distributed feedback lasers consisting of deeply etched double quantum-well wire-like active regions have been successfully realised by CH4 /H2 reactive ion etching and metal organic vapour phase epitaxial regrowth. A threshold current density Jth of as low as 94 A/cm2 was achieved for an active region width of 115 nm and cavity length of 600 μm
Keywords
gallium arsenide; 1.5 micron; CH4/H2 reactive ion etching; GaInAsP-InP; GaInAsP/InP distributed feedback laser; double quantum well wire-like active region; metal organic vapour phase epitaxial regrowth; threshold current density;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20000509
Filename
842211
Link To Document