DocumentCode :
1335880
Title :
Statistical Design Framework of Submicron Flip-Flop Circuits Considering Process Variations
Author :
Sadrossadat, Sayed Alireza ; Mostafa, Hassan ; Anis, Mohab
Author_Institution :
Dept. of Electron., Carleton Univ., Ottawa, ON, Canada
Volume :
24
Issue :
1
fYear :
2011
Firstpage :
69
Lastpage :
79
Abstract :
In this paper, a framework for the statistical design of the flip-flops circuits is proposed to achieve a high yield, while meeting the performance, leakage power, switching power, and layout area design specifications. The proposed design solution provides the nominal design parameters, i.e., the widths and lengths of the flip-flop transistors, which provide maximum immunity to the process variations in the transistor dimensions and threshold voltage. The proposed framework shows that for a given flip-flop design specifications, a certain yield can be achieved. To further increase this yield, the proposed framework shows which design specifications should be relaxed. The transmission gate-based master-slave flip-flop is selected as a design case study in this paper, however, the proposed framework is applicable to any other flip-flop circuit in the nanometer regime.
Keywords :
flip-flops; integrated circuit layout; statistical analysis; layout area design specifications; leakage power; nanometer regime; nominal design parameters; process variations; statistical design framework; submicron flip-flop circuits; switching power; threshold voltage; transistor dimensions; transmission gate-based master-slave flip-flop; Design framework; flip-flops; nanometer regime; process variations; yield maximization;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/TSM.2010.2080693
Filename :
5585831
Link To Document :
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