• DocumentCode
    1336375
  • Title

    Design and Realization of Wide-Band-Gap ( \\sim 2.67 eV) InGaN p-n Junction Solar Cell

  • Author

    Jampana, Balakrishnam R. ; Melton, Andrew G. ; Jamil, Muhammad ; Faleev, Nikolai N. ; Opila, Robert L. ; Ferguson, Ian T. ; Honsberg, Christiana B.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Univ. of Delaware, Newark, DE, USA
  • Volume
    31
  • Issue
    1
  • fYear
    2010
  • Firstpage
    32
  • Lastpage
    34
  • Abstract
    The design of coherently strained InGaN epilayers for use in InGaN p-n junction solar cells is presented in this letter. The X-ray diffraction of the epitaxially grown device structure indicates two InGaN epilayers with indium compositions of 14.8% and 16.8%, which are confirmed by photoluminescence peaks observed at 2.72 and 2.67 eV, respectively. An open-circuit voltage of 1.73 V and a short-circuit current density of 0.91 mA/cm2 are observed under concentrated AM 0 illumination from the fabricated solar cell. The photovoltaic response from the InGaN p-n junction is confirmed by using an ultraviolet filter. The solar cell performance is shown to be related to the crystalline defects in the device structure.
  • Keywords
    X-ray diffraction; p-n junctions; solar cells; InGaN; X-ray diffraction; crystalline defects; photoluminescence peaks; ultraviolet filter; wide-band-gap p-n junction solar cell; Fabrication; InGaN solar cell; solar cell;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2009.2034280
  • Filename
    5338010
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1336375