DocumentCode :
1336375
Title :
Design and Realization of Wide-Band-Gap ( 
2.67 eV) InGaN p-n Junction Solar Cell
Author :
Jampana, Balakrishnam R. ; Melton, Andrew G. ; Jamil, Muhammad ; Faleev, Nikolai N. ; Opila, Robert L. ; Ferguson, Ian T. ; Honsberg, Christiana B.
Author_Institution :
Dept. of Mater. Sci. & Eng., Univ. of Delaware, Newark, DE, USA
Volume :
31
Issue :
1
fYear :
2010
Firstpage :
32
Lastpage :
34
Abstract :
The design of coherently strained InGaN epilayers for use in InGaN p-n junction solar cells is presented in this letter. The X-ray diffraction of the epitaxially grown device structure indicates two InGaN epilayers with indium compositions of 14.8% and 16.8%, which are confirmed by photoluminescence peaks observed at 2.72 and 2.67 eV, respectively. An open-circuit voltage of 1.73 V and a short-circuit current density of 0.91 mA/cm2 are observed under concentrated AM 0 illumination from the fabricated solar cell. The photovoltaic response from the InGaN p-n junction is confirmed by using an ultraviolet filter. The solar cell performance is shown to be related to the crystalline defects in the device structure.
Keywords :
X-ray diffraction; p-n junctions; solar cells; InGaN; X-ray diffraction; crystalline defects; photoluminescence peaks; ultraviolet filter; wide-band-gap p-n junction solar cell; Fabrication; InGaN solar cell; solar cell;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2034280
Filename :
5338010
Link To Document :
