Title :
Optical information storage and charge traps in PZT thin films
Author :
Ivey, Mark ; Mancha, Sylvia ; Carter, Robert
Author_Institution :
Radiant Technol., Albuquerque, NM, USA
fDate :
7/1/1991 12:00:00 AM
Abstract :
Storage of optical data in thin film PZT (lead zirconate titanate) has been demonstrated at a wavelength of 833 nm. A method for the storage and detection of simple optical-data images in thin PZT films is described. Dots and bars were stored in a 0.5- mu m-thick 0/50/50 PZT using 488, 543, 633, and 833 nm wavelengths, and detected by measuring photocurrents while scanning a low-power read beam across the film. The data presented suggest that traps and related photoinduced charge carrier generation play an important role in this optical storage mechanism.<>
Keywords :
lead compounds; optical films; optical storage; 488 to 833 nm; PZT; PZT thin films; PbZrO3TiO3; charge traps; low-power read beam; measuring photocurrents; optical information storage; optical storage mechanism; optical-data images; photoinduced charge carrier generation; wavelength; Ceramics; Charge carrier processes; Ferroelectric films; Holographic optical components; Holography; Nonlinear optics; Optical films; Optical modulation; Optical scattering; Wavelength measurement;
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
