Optical information storage and charge traps in PZT thin films

Author

Ivey, Mark ; Mancha, Sylvia ; Carter, Robert

Author_Institution

Radiant Technol., Albuquerque, NM, USA

Volume

38

Issue

4

fYear

1991

fDate

7/1/1991 12:00:00 AM

Firstpage

337

Lastpage

343

Abstract

Storage of optical data in thin film PZT (lead zirconate titanate) has been demonstrated at a wavelength of 833 nm. A method for the storage and detection of simple optical-data images in thin PZT films is described. Dots and bars were stored in a 0.5- mu m-thick 0/50/50 PZT using 488, 543, 633, and 833 nm wavelengths, and detected by measuring photocurrents while scanning a low-power read beam across the film. The data presented suggest that traps and related photoinduced charge carrier generation play an important role in this optical storage mechanism.<>

Keywords

lead compounds; optical films; optical storage; 488 to 833 nm; PZT; PZT thin films; PbZrO3TiO3; charge traps; low-power read beam; measuring photocurrents; optical information storage; optical storage mechanism; optical-data images; photoinduced charge carrier generation; wavelength; Ceramics; Charge carrier processes; Ferroelectric films; Holographic optical components; Holography; Nonlinear optics; Optical films; Optical modulation; Optical scattering; Wavelength measurement;

fLanguage

English

Journal_Title

Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on

Publisher

ieee

ISSN

0885-3010

Type

jour

DOI

10.1109/58.84272

Filename

84272