Title :
Ammonia Sensing Characteristics of Sputtered Indium Tin Oxide (ITO) Thin Films on Quartz and Sapphire Substrates
Author :
Lin, Cheng-Wei ; Chen, Huey-Ing ; Chen, Tai-You ; Huang, Chien-Chang ; Hsu, Chi-Shiang ; Liu, Wen-Chau
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
Indium tin oxide (ITO) thin-fllm-based ammonia sensors on sapphire and quartz substrates, fabricated by radio frequency sputtering with substrate heated treatments, are studied and demonstrated. Experimentally, good NH3 sensing properties of ITO thin Alms deposited on a quartz substrate, with a substrate temperature Ts of 100°C, including a high sensitivity ratio of 2312%, and fast response and recovery times of 73 and 104 s upon the introduction of a 1000-ppm NH3/air gas at 150°C, are observed. This performance is superior to other previously reported ITO thin-fllm-based ammonia sensors. Moreover, a good logarithmic linear relationship between the sensitivity ratio and the NH3 concentration is found. Therefore, based on the advantages of simple structure, easy operation, low cost, and excellent properties, the studied device gives a promise for high performance ammonia sensing applications.
Keywords :
ammonia; gas sensors; heat treatment; semiconductor thin films; sputter deposition; thin film sensors; Al2O3; ITO; NH3; ammonia sensor; heat treatment; high-performance ammonia sensing application; logarithmic linear relationship; quartz substrate; radiofrequency sputtering; sapphire substrate; sensitivity ratio; sputtered indium tin oxide thin film; thin film deposition; Gas detectors; Indium tin oxide; Sensitivity; Strontium; Substrates; Temperature sensors; Ammonia sensor; crystalline; grain size; indium tin oxide (ITO); oxygen deficiency; radio-frequency sputtering;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2167234
