• DocumentCode
    1336569
  • Title

    Ammonia Sensing Characteristics of Sputtered Indium Tin Oxide (ITO) Thin Films on Quartz and Sapphire Substrates

  • Author

    Lin, Cheng-Wei ; Chen, Huey-Ing ; Chen, Tai-You ; Huang, Chien-Chang ; Hsu, Chi-Shiang ; Liu, Wen-Chau

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
  • Volume
    58
  • Issue
    12
  • fYear
    2011
  • Firstpage
    4407
  • Lastpage
    4413
  • Abstract
    Indium tin oxide (ITO) thin-fllm-based ammonia sensors on sapphire and quartz substrates, fabricated by radio frequency sputtering with substrate heated treatments, are studied and demonstrated. Experimentally, good NH3 sensing properties of ITO thin Alms deposited on a quartz substrate, with a substrate temperature Ts of 100°C, including a high sensitivity ratio of 2312%, and fast response and recovery times of 73 and 104 s upon the introduction of a 1000-ppm NH3/air gas at 150°C, are observed. This performance is superior to other previously reported ITO thin-fllm-based ammonia sensors. Moreover, a good logarithmic linear relationship between the sensitivity ratio and the NH3 concentration is found. Therefore, based on the advantages of simple structure, easy operation, low cost, and excellent properties, the studied device gives a promise for high performance ammonia sensing applications.
  • Keywords
    ammonia; gas sensors; heat treatment; semiconductor thin films; sputter deposition; thin film sensors; Al2O3; ITO; NH3; ammonia sensor; heat treatment; high-performance ammonia sensing application; logarithmic linear relationship; quartz substrate; radiofrequency sputtering; sapphire substrate; sensitivity ratio; sputtered indium tin oxide thin film; thin film deposition; Gas detectors; Indium tin oxide; Sensitivity; Strontium; Substrates; Temperature sensors; Ammonia sensor; crystalline; grain size; indium tin oxide (ITO); oxygen deficiency; radio-frequency sputtering;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2011.2167234
  • Filename
    6031908