DocumentCode
1336569
Title
Ammonia Sensing Characteristics of Sputtered Indium Tin Oxide (ITO) Thin Films on Quartz and Sapphire Substrates
Author
Lin, Cheng-Wei ; Chen, Huey-Ing ; Chen, Tai-You ; Huang, Chien-Chang ; Hsu, Chi-Shiang ; Liu, Wen-Chau
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume
58
Issue
12
fYear
2011
Firstpage
4407
Lastpage
4413
Abstract
Indium tin oxide (ITO) thin-fllm-based ammonia sensors on sapphire and quartz substrates, fabricated by radio frequency sputtering with substrate heated treatments, are studied and demonstrated. Experimentally, good NH3 sensing properties of ITO thin Alms deposited on a quartz substrate, with a substrate temperature Ts of 100°C, including a high sensitivity ratio of 2312%, and fast response and recovery times of 73 and 104 s upon the introduction of a 1000-ppm NH3/air gas at 150°C, are observed. This performance is superior to other previously reported ITO thin-fllm-based ammonia sensors. Moreover, a good logarithmic linear relationship between the sensitivity ratio and the NH3 concentration is found. Therefore, based on the advantages of simple structure, easy operation, low cost, and excellent properties, the studied device gives a promise for high performance ammonia sensing applications.
Keywords
ammonia; gas sensors; heat treatment; semiconductor thin films; sputter deposition; thin film sensors; Al2O3; ITO; NH3; ammonia sensor; heat treatment; high-performance ammonia sensing application; logarithmic linear relationship; quartz substrate; radiofrequency sputtering; sapphire substrate; sensitivity ratio; sputtered indium tin oxide thin film; thin film deposition; Gas detectors; Indium tin oxide; Sensitivity; Strontium; Substrates; Temperature sensors; Ammonia sensor; crystalline; grain size; indium tin oxide (ITO); oxygen deficiency; radio-frequency sputtering;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2011.2167234
Filename
6031908
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