DocumentCode :
1336834
Title :
Integration for All Configurations
Author :
Ionescu, Adrian M. ; Dijon, Jean ; Robertson, John
Author_Institution :
Nanolab, Ecole Polytech. Fed. de Lausanne, Lausanne, Switzerland
Volume :
12
Issue :
7
fYear :
2011
Firstpage :
42
Lastpage :
50
Abstract :
In this article, we have reported the fabrication and characterization of some basic building block of a new type of CNT-array based BEOL: vias using vertical dense arrays of semiconducting CNTs and RF MEM switches using horizontal dense arrays of a mixture of metallic and semiconducting tubes. A density of CNTs up to 2.5 1012 cm~2 is reported in 1 μm diameter vias, which is, to our best knowledge, the highest density so far achieved. The CNT horizontal membranes have a Young´s modulus of the order of 8.5 GPa and a resistiv ity of 0.0083 Ω cm, respectively, these are by far not optimized but they offer for the first time the possibility to build a fully functional capacitive RF MEM switch. RF measurements of the mechanical switch show isolation higher then 10 dB at high frequency (up to 6 GHz) and a low actuation voltage (less than 10 V). The reported electrical and mechanical properties are unique compared to metal-based RF MEM switches and, after further optimization, seem to hold promise for future improved performance and novel functionality.
Keywords :
Young´s modulus; carbon nanotubes; microswitches; CNT-array based BEOL; Young´s modulus; electrical properties; functional capacitive RF MEM switch; horizontal dense arrays; mechanical properties; mechanical switch; metal-based RF MEM switches; metallic tubes; pressure 8.5 GPa; semiconducting tubes; size 1 mum; vertical dense arrays; CMOS integrated circuits; Carbon nanotubes; Electrodes; Electron tubes; Nanoelectromechanical systems; Radio frequency; Resistance;
fLanguage :
English
Journal_Title :
Microwave Magazine, IEEE
Publisher :
ieee
ISSN :
1527-3342
Type :
jour
DOI :
10.1109/MMM.2011.942700
Filename :
6031951
Link To Document :
بازگشت