Novel source-controlled self-verified programming for multilevel EEPROMs

Author

Lin, Shih-Yun ; Shih-Yun Lin ; Lee, Mou-Lin ; Boe, Chen-Hao ; Yeh, Ching-Pen ; Wu, Po-Hao ; Ni, James ; King, Ya-Chin ; Hsu, Charles Ching-Hsiang

Author_Institution

Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

Volume

47

Issue

6

fYear

2000

fDate

6/1/2000 12:00:00 AM

Firstpage

1166

Lastpage

1174

Abstract

In this work, a new source-controlled self-verified (SCSV) programming method for multilevel storage in EEPROM is discussed. Multilevel storage is a cost-effective approach to improve storage capacity and reduce bit-cost. However, the reduced interlevel margin impacts the reliability and available endurance. The new SCSV programming approach using simultaneous programming and verification can control threshold voltages by different source voltages. Linear relationship between threshold voltage and source voltage is obtained. Furthermore, the endurance of multilevel storage is extended up to 10 ⁶ cycles. The accurate control of threshold voltage improves the reliability of multilevel EEPROM´s. Therefore, the SCSV programming approach is a promising technique for future high-density and low-cost EEPROM applications

Keywords

EPROM; flash memories; integrated circuit reliability; integrated memory circuits; multivalued logic; bit-cost; endurance; high-density applications; interlevel margin; low-cost applications; multilevel EEPROMs; reliability; source voltages; source-controlled self-verified programming; storage capacity; threshold voltages; Capacitance; Capacitors; Costs; Current supplies; EPROM; Flash memory; Microprogramming; Printers; Threshold voltage; Voltage control;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.842958

Filename

842958