On the reverse short channel effect in deep submicron heterojunction MOSFET´s and its impact on the current-voltage behavior

In this paper, we report on the reverse short channel effect (RSCE) in vertical heterojunction MOSFET´s, which use a source/channel heterojunction for reduction of the short channel effect (SCE) in deep submicron devices. The study shows that a typical RSCE will occur when the heterobarrier dominates the channel potential and when the barrier is strong enough to shift the potential maximum (pMOS) or minimum (nMOS) toward the source/channel interface. The particular channel potential for these devices will give rise to a current-voltage (I-V) behavior which deviates from the classical linear or saturation regime for homojunction devices. A distinctive “transition zone” needs to be taken into account