Approach to electrochemical C-V profiling in semiconductor with sub-Debye-length resolution

Author

Shashkin, V.I. ; Karetnikova, Irene R. ; Murel, Arcady ; Nefedov, Igor ; Shereshevski, Ilya A.

Author_Institution

Inst. for Phys. of Microstruct., Acad. of Sci., Nizhny Novgorod, Russia

Volume

47

Issue

6

fYear

2000

fDate

6/1/2000 12:00:00 AM

Firstpage

1221

Lastpage

1224

Abstract

Three methods for the determination of the detailed structure of dopant distribution in semiconductors, based on the data of electrochemical C-V profiling, are proposed. The methods give the possibility of determining a dopant distribution directly from a semiconductor surface and providing a sub-Debye length resolution. The results of numerical simulation confirm the possibility of determination of semiconductor dopant profile with nanometer depth resolution

Keywords

doping profiles; electric variables measurement; numerical analysis; semiconductors; dopant distribution; dopant profile determination; electrochemical C-V profiling data; nanometer depth resolution; numerical simulation; semiconductor surface; sub-Debye-length resolution; Capacitance measurement; Capacitance-voltage characteristics; Doping profiles; Electrons; Etching; Integral equations; Numerical simulation; Semiconductor device doping; Semiconductor materials; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.842965

Filename

842965