Title :
A physically-based semi-empirical series resistance model for deep-submicron MOSFET I-V modeling
Author :
Lim, K.Y. ; Zhou, X.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
fDate :
6/1/2000 12:00:00 AM
Abstract :
A physically-based series resistance model for deep-submicron MOSFET is presented, which includes a bias-dependent (intrinsic) component and a bias-independent (extrinsic) component. The model is semi-empirical and consists of two physics-based fitting parameters to be extracted with a single measurement, which can be extended to all gate-length and bias conditions. The model can be applied to drain-current prediction and optimization due to process fluctuations such as LDD junction depth and spacer thickness
Keywords :
MOSFET; electric resistance; semiconductor device models; I-V modeling; LDD junction depth; bias conditions; bias-dependent component; bias-independent component; deep-submicron MOSFET; drain-current prediction; fitting parameters; gate-length conditions; physically-based semi-empirical series resistance model; process fluctuations; spacer thickness; Current measurement; Data mining; Electrical resistance measurement; Fluctuations; MOSFET circuits; Numerical models; Predictive models; Space technology; Threshold voltage; Ultra large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
