DocumentCode :
1337807
Title :
FDTD Simulation of Inverse 3-D Face-Centered Cubic Photonic Crystal Cavities
Author :
Ho, Ying-Lung Daniel ; Ivanov, Pavel S. ; Engin, Erman ; Nicol, Matthieu F J ; Taverne, Mike P C ; Hu, Chengyong ; Cryan, Martin J. ; Craddock, Ian James ; Railton, Chris J. ; Rarity, John G.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Bristol, Bristol, UK
Volume :
47
Issue :
12
fYear :
2011
Firstpage :
1480
Lastpage :
1492
Abstract :
We present the modeling and simulation of 3-D face-centered cubic photonic crystal (PhC) cavities with various defects. We use the plane-wave expansion method to map the allowed modes and photonic bandgaps. Having determined the photonic bands we design specific defects and input-output waveguides and model the coupling between defects and waveguides using the 3-D finite-difference time-domain method. We have calculated the Q-factors and modal volumes (Veff) of the resonant cavity modes for the PhC structures made of materials including germanium (Ge), silicon (Si), gallium phosphide (GaP), titanium dioxide (TiO2), and silica (SiO2). We then use our estimates of Q and Veff to quantify the enhancement of spontaneous emission and possibility of achieving strong coupling with color centers and quantum dots.
Keywords :
III-V semiconductors; Q-factor; finite difference time-domain analysis; gallium compounds; germanium; optical resonators; optical waveguides; photonic crystals; silicon; silicon compounds; titanium compounds; 3D finite difference time-domain method; FDTD simulation; GaP; Ge; Q-factor; Si; SiO2; TiO2; cubic photonic crystal defects; input-output waveguides; inverse 3D face centered cubic photonic crystal cavities; modal volumes; photonic bandgaps; plane-wave expansion method; resonant cavity mode; Electrodynamics; Finite difference methods; Lattices; Photonic crystals; Q factor; Quantum dots; 3-D photonic crystals; cavity quantum electrodynamics; diamond NV centers; quantum dots;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2011.2170404
Filename :
6032703
Link To Document :
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