DocumentCode :
1337823
Title :
Cryosar Memory Design
Author :
Johnston, R.C.
Author_Institution :
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Mass.
Issue :
4
fYear :
1961
Firstpage :
712
Lastpage :
717
Abstract :
The compensated cryosar is a negative-resistance two-terminal device utilizing a bulk effect in germanium at liquid helium temperatures. Its bistable nature, and the ease with which it can be fabricated in large arrays recommend it for application to computer memory systems. However, careful consideration of device and circuit parameters is necessary if a successful large memory is to be achieved.
Keywords :
Application software; Circuits; Computer applications; Diodes; Germanium; Helium; Impact ionization; Impurities; Temperature; Voltage;
fLanguage :
English
Journal_Title :
Electronic Computers, IRE Transactions on
Publisher :
ieee
ISSN :
0367-9950
Type :
jour
DOI :
10.1109/TEC.1961.5219278
Filename :
5219278
Link To Document :
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