High Q-factor inductors integrated on MCM Si substrates

Author

Zu, Larry ; Lu, Yicheng ; Frye, Robert C. ; Lau, Maureen Y. ; Chen, Sheue-Chyn Sandy ; Kossives, Dean P. ; Lin, Jenshan ; Tai, King L.

Author_Institution

Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA

Volume

19

Issue

3

fYear

1996

fDate

8/1/1996 12:00:00 AM

Firstpage

635

Lastpage

643

Abstract

High quality factor (Q) inductors were designed and fabricated on high-resistivity (2000 Ω·cm) Si substrates with multichip module (MCM) fabrication technology. A Q-factor of 30 was achieved for an inductor of 4 nH at 1-2 GHz. To enhance the Q-factor and reduce the parasitic coupling capacitance, a staggered double metal-layered structure was utilized by taking advantage of the double-layered metal lines in MCM. With electromagnetic simulation tools, computer-aided analysis was used to optimize the device characteristics. The skin effect and the lossy substrate effect on the performance of the radio frequency (RF) thin-film inductors were studied. The fabrication process used polyimide as the dielectric layer and aluminum as the metal layer. The use of the low dielectric-constant material, polyimide, reduces the parasitic coupling capacitance between metal lines and increases the quality factor and the self-resonant frequency for the RF integrated inductors

Keywords

Q-factor; S-parameters; UHF devices; UHF integrated circuits; inductors; multichip modules; silicon; skin effect; 1 to 2 GHz; Al metal layer; MCM Si substrates; MCM fabrication technology; RF integrated inductors; RF thin-film inductors; Si; computer-aided analysis; double-layered metal lines; electromagnetic simulation tools; fabrication process; high Q-factor inductors; high-resistivity Si substrates; lossy substrate effect; low dielectric-constant material; multichip module; parasitic coupling capacitance reduction; polyimide dielectric layer; quality factor; radiofrequency inductors; self-resonant frequency; skin effect; staggered double metal-layered structure; Computational modeling; Dielectric substrates; Electromagnetic devices; Fabrication; Multichip modules; Parasitic capacitance; Polyimides; Q factor; Radio frequency; Thin film inductors;

fLanguage

English

Journal_Title

Components, Packaging, and Manufacturing Technology, Part B: Advanced Packaging, IEEE Transactions on

Publisher

ieee

ISSN

1070-9894

Type

jour

DOI

10.1109/96.533907

Filename

533907