• DocumentCode
    1338022
  • Title

    Mechanism of Contact Resistance Reduction in Nickel Silicide Films by Pt Incorporation

  • Author

    Sonehara, Takeshi ; Hokazono, Akira ; Akutsu, Haruko ; Sasaki, Tomokazu ; Uchida, Hiroshi ; Tomita, Mitsuhiro ; Kawanaka, Shigeru ; Inaba, Satoshi ; Toyoshima, Yoshiaki

  • Author_Institution
    Semicond. Co., Center for Semicond. R&D, Toshiba Corp., Yokohama, Japan
  • Volume
    58
  • Issue
    11
  • fYear
    2011
  • Firstpage
    3778
  • Lastpage
    3786
  • Abstract
    Platinum (Pt) incorporation into nickel silicide (NiSi) films improves silicide characteristics such as lower contact resistance RC at silicide/Si interface and higher thermal stability. The impact of Pt incorporation is widely accepted and recognized in research field; however, the role of Pt in NiSi films has not been fully clarified so far. In this paper, the spatial distributions of Pt and dopants (i.e., arsenic and boron) in silicide films are studied at an atomic level analysis using local electrode atom probe. In particular, Pt and dopant distributions were investigated in detail both at silicide/Si interface and at silicide-grain boundary. Silicide-grain size was also analyzed at various Pt concentrations in silicide films, and the relationship between the Pt concentration and physical properties of Ni1-xPtxSi films is pointed out. Finally, for further CMOS device scaling, the benefit of higher concentration of Pt incorporation into Ni1-xPtxSi films is described.
  • Keywords
    contact resistance; elemental semiconductors; grain boundaries; grain size; metallisation; nickel compounds; platinum compounds; semiconductor doping; semiconductor-metal boundaries; silicon; thermal stability; CMOS device scaling; PtNiSi-Si; atomic level analysis; contact resistance reduction; dopant distributions; nickel silicide films; physical property; platinum incorporation; silicide characteristics; silicide-grain boundary; silicide-grain size; spatial distributions; thermal stability; Contact resistance; Grain boundaries; Nickel; Silicides; Silicon; Surface resistance; Atom probe; MOS devices; Schottky barriers; contact resistance; metal–oxide–semiconductor field-effect transistors (MOSFETs); metallization; nickel; platinum; semiconductor devices; silicide;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2011.2166557
  • Filename
    6032735
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1338022