• DocumentCode
    1338037
  • Title

    Electromagnetic Compatibility-Oriented Study on Through Silicon Single-Walled Carbon Nanotube Bundle Via (TS-SWCNTBV) Arrays

  • Author

    Zhao, Wen-Sheng ; Yin, Wen-Yan ; Guo, Yong-Xin

  • Author_Institution
    State Key Lab. of MOI, Zhejiang Univ., Hangzhou, China
  • Volume
    54
  • Issue
    1
  • fYear
    2012
  • Firstpage
    149
  • Lastpage
    157
  • Abstract
    Electromagnetic compatibility-oriented study is performed for accurately characterizing through silicon single-walled carbon nanotube bundle via (TS-SWCNTBV) array in this paper. Based on the modified equivalent lumped-element circuit model of a pair of TS-SWCNTBVs, its forward transmission coefficient, in comparison with copper- and tungsten-based TSVs, is investigated for different metallic fractions of the SWCNTs, with quantum effects treated appropriately. The 3-D transmission-line method (TLM) is further employed for studying mutual couplings in three, four, and nine TS-SWCNTBV arrays, respectively, where the effects of their geometrical and physical parameters on the effective capacitance and conductance are examined in detail. Also, transient coupling noises in different arrays excited by a clock signal, respectively, are predicted and compared, which are useful for the design of high density TS-SWCNTBV arrays with better signal transmission performance.
  • Keywords
    capacitance; carbon nanotubes; electric admittance; electromagnetic compatibility; electromagnetic coupling; equivalent circuits; integrated circuit metallisation; lumped parameter networks; three-dimensional integrated circuits; transmission line theory; 3D TLM; 3D transmission-line method; SWCNT metallic fractions; capacitance; clock signal high density TS-SWCNTBV arrays; conductance; electromagnetic compatibility-oriented study; equivalent lumped element circuit model; forward transmission coefficient; mutual couplings; quantum effects; through silicon single-walled carbon nanotube bundle via arrays; transient coupling noises; Conductivity; Copper; Couplings; Integrated circuit modeling; Quantum capacitance; Silicon; Complex effective conductivity; equivalent lumped-element circuit model; mutual coupling; quantum effects; through silicon single-walled carbon nanotube bundle via (TS-SWCNTBV) array; transient coupling noise; transmission-line method (TLM);
  • fLanguage
    English
  • Journal_Title
    Electromagnetic Compatibility, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9375
  • Type

    jour

  • DOI
    10.1109/TEMC.2011.2167336
  • Filename
    6032737