Title :
An X-Band AlGaN/GaN MMIC Receiver Front-End
Author :
Thorsell, Mattias ; Fagerlind, Martin ; Andersson, Kristoffer ; Billström, Niklas ; Rorsman, Niklas
Author_Institution :
Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
This letter presents an integrated AlGaN/GaN X-band receiver front-end. This is to the authors knowledge the first published results of an integrated AlGaN/GaN MMIC receiver front-end. The receiver uses an integrated SPDT switch to reduce size, weight and cost compared to circulator based transceiver front-ends. The integrated front-end has more than 13 dB of gain and a noise figure of 3.5 dB at 11 GHz.
Keywords :
III-V semiconductors; aluminium compounds; field effect MMIC; gallium compounds; radar receivers; wide band gap semiconductors; AlGaN-GaN; HEMT; X-band receiver front-end; frequency 11 GHz; integrated MMIC receiver front-end; integrated SPDT switch; noise figure; noise figure 3.5 dB; AlGaN/GaN; HEMT; LNA; MMIC; noise; receiver; switch; transceiver;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2009.2035968
