• DocumentCode
    1338142
  • Title

    An X-Band AlGaN/GaN MMIC Receiver Front-End

  • Author

    Thorsell, Mattias ; Fagerlind, Martin ; Andersson, Kristoffer ; Billström, Niklas ; Rorsman, Niklas

  • Author_Institution
    Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden
  • Volume
    20
  • Issue
    1
  • fYear
    2010
  • Firstpage
    55
  • Lastpage
    57
  • Abstract
    This letter presents an integrated AlGaN/GaN X-band receiver front-end. This is to the authors knowledge the first published results of an integrated AlGaN/GaN MMIC receiver front-end. The receiver uses an integrated SPDT switch to reduce size, weight and cost compared to circulator based transceiver front-ends. The integrated front-end has more than 13 dB of gain and a noise figure of 3.5 dB at 11 GHz.
  • Keywords
    III-V semiconductors; aluminium compounds; field effect MMIC; gallium compounds; radar receivers; wide band gap semiconductors; AlGaN-GaN; HEMT; X-band receiver front-end; frequency 11 GHz; integrated MMIC receiver front-end; integrated SPDT switch; noise figure; noise figure 3.5 dB; AlGaN/GaN; HEMT; LNA; MMIC; noise; receiver; switch; transceiver;
  • fLanguage
    English
  • Journal_Title
    Microwave and Wireless Components Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1531-1309
  • Type

    jour

  • DOI
    10.1109/LMWC.2009.2035968
  • Filename
    5339110
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1338142