مرکز منطقه ای اطلاع رساني علوم و فناوري - Applying Complementary Trap Characterization Technique to Crystalline <formula formulatype="inline"> <img src="/images/tex/255.gif" alt="\\gamma "> </formula>-Phase-<formula formulatype="inline"> <img src="/images/tex/19445.gif" alt="\\hbox {Al}

Title :

Applying Complementary Trap Characterization Technique to Crystalline $\\gamma$ -Phase- $\\hbox {Al}_{2} \\hbo</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Zahid, Mohammed B. ; Aguado, Daniel Ruiz ; Degraeve, R. ; Wang, W.C. ; Govoreanu, Bogdan ; Toledano-Luque, María ; Afanas, V.V. ; Van Houdt, Jan</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author_Institution : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>imec, Leuven, Belgium</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Volume : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>57</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Issue : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>11</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fYear : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2010</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Firstpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2907</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Lastpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2916</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Abstract : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>The operation and reliability of nonvolatile memory concepts based on charge storage in nitride layers, such as TANOS (TaN/Al<sub>2</sub>O<sub>3</sub>/Si<sub>3</sub>N<sub>4</sub>/ SiO<sub>2</sub>/Si), require detailed information on the energy and spatial distribution of the charge defects in both the nitride and the Al<sub>2</sub>O<sub>3</sub> blocking dielectric. This paper focuses on the characterization of Al<sub>2</sub>O<sub>3</sub>. We have successfully applied complementary trap characterization techniques to crystalline γ-phase- Al<sub>2</sub>O<sub>3</sub> in order to obtain a complete picture of the spatial and energetic distribution of the defect density. As a result, two defect types at energy levels 1.8 and 3.5 eV below the conduction band edge are found.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>MOS capacitors; aluminium compounds; conduction bands; electron traps; semiconductor device reliability; semiconductor device testing; semiconductor storage; silicon; silicon compounds; tantalum compounds; MOS capacitors; TaN-Al<sub>2</sub>O<sub>3</sub>-Si<sub>3</sub>N<sub>4</sub>-SiO<sub>2</sub>-Si; charge defects; charge storage; complementary trap characterization; conduction band; crystalline γ-phase-Al<sub>2</sub> O<sub>3</sub>; energy levels; nitride layers; nonvolatile memory operation; reliability; Aluminum oxide; Dielectrics; Electron traps; Nonvolatile memory; Partial discharges; Substrates; Charge trap (CT) memory; TANOS; crystalline <formula formulatype=$ $ hbox{Al}_{2}hbox{O}_{3}$; photodepopulation spectroscopy (PDS); trap characterization; trap spectroscopy by charge injection and sensing (TSCIS); two-pulse $C$– $V$;