• DocumentCode
    1338168
  • Title

    Applying Complementary Trap Characterization Technique to Crystalline \\gamma -Phase- \\hbox {Al}_{2} \\hbo</h1></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><h2 class='mb-0 fw-semibold'>Zahid, Mohammed B. ; Aguado, Daniel Ruiz ; Degraeve, R. ; Wang, W.C. ; Govoreanu, Bogdan ; Toledano-Luque, María ; Afanas, V.V. ; Van Houdt, Jan</h2></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author_Institution</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>imec, Leuven, Belgium</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Volume</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>57</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Issue</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>11</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fYear</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>2010</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Firstpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>2907</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Lastpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>2916</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Abstract</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>The operation and reliability of nonvolatile memory concepts based on charge storage in nitride layers, such as TANOS (TaN/Al<sub>2</sub>O<sub>3</sub>/Si<sub>3</sub>N<sub>4</sub>/ SiO<sub>2</sub>/Si), require detailed information on the energy and spatial distribution of the charge defects in both the nitride and the Al<sub>2</sub>O<sub>3</sub> blocking dielectric. This paper focuses on the characterization of Al<sub>2</sub>O<sub>3</sub>. We have successfully applied complementary trap characterization techniques to crystalline γ-phase- Al<sub>2</sub>O<sub>3</sub> in order to obtain a complete picture of the spatial and energetic distribution of the defect density. As a result, two defect types at energy levels 1.8 and 3.5 eV below the conduction band edge are found.</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>MOS capacitors; aluminium compounds; conduction bands; electron traps; semiconductor device reliability; semiconductor device testing; semiconductor storage; silicon; silicon compounds; tantalum compounds; MOS capacitors; TaN-Al<sub>2</sub>O<sub>3</sub>-Si<sub>3</sub>N<sub>4</sub>-SiO<sub>2</sub>-Si; charge defects; charge storage; complementary trap characterization; conduction band; crystalline γ-phase-Al<sub>2</sub> O<sub>3</sub>; energy levels; nitride layers; nonvolatile memory operation; reliability; Aluminum oxide; Dielectrics; Electron traps; Nonvolatile memory; Partial discharges; Substrates; Charge trap (CT) memory; TANOS; crystalline <formula formulatype=$ hbox{Al}_{2}hbox{O}_{3}$; photodepopulation spectroscopy (PDS); trap characterization; trap spectroscopy by charge injection and sensing (TSCIS); two-pulse $C$– $V$;

  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2010.2071071
  • Filename
    5587884
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1338168