DocumentCode
1338288
Title
New equations for biasing the BJT-CE amplifier
Author
González, Julio J. ; Prager, Daniel J.
Author_Institution
Dept. of Electr. Eng., State Univ. of New York, New Paltz, NY, USA
Volume
41
Issue
1
fYear
1998
fDate
2/1/1998 12:00:00 AM
Firstpage
70
Lastpage
75
Abstract
This paper introduces two original equations for biasing the common-emitter bipolar-junction transistor (BJT-CE) amplifier. These equations permit placing both Q-point coordinates (i.e. current and voltage) within known bounds in the presence of transistor parameter variations. An illustrative design example is provided
Keywords
amplifiers; bipolar transistor circuits; equivalent circuits; semiconductor device models; BJT-CE amplifier; Q-point coordinates; biasing equations; common-emitter bipolar-junction transistor amplifier; current; design example; parameter variations; voltage; Circuit analysis; Circuit synthesis; Equations; Helium; Kirchhoff´s Law; Transconductance; Uncertainty; Voltage;
fLanguage
English
Journal_Title
Education, IEEE Transactions on
Publisher
ieee
ISSN
0018-9359
Type
jour
DOI
10.1109/13.660792
Filename
660792
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