Title :
Selective emitters in Si by single step rapid thermal diffusion for photovoltaic devices
Author :
Sivoththaman, S. ; Laureys, W. ; De Schepper, P. ; Nijs, J. ; Mertens, R.
Author_Institution :
Inter-Univ. Micro Electron. Center, Leuven, Belgium
fDate :
6/1/2000 12:00:00 AM
Abstract :
Selective phosphorous diffusion is performed in Si to simultaneously form shallow n/sup +/p junctions of different depths in the submicron range by rapid thermal annealing (RTA). Low temperature (400/spl deg/C) atmospheric pressure chemical vapor deposited (APCVD) phosphosilicate glass (PSG) is used as diffusion source. A wide range of n/sup +/p junctions could be tailored with the same thermal budget by changing only the APCVD-PSG composition. This allows the formation of selectively diffused emitters in different regions of the wafer in one RTA step. 10 cm/spl times/10 cm Cz-Si selective emitter photovoltaic (PV) devices are fabricated this way with high energy conversion efficiencies in the range of 17% to 18%.
Keywords :
elemental semiconductors; phosphorus; photovoltaic cells; rapid thermal annealing; rapid thermal processing; semiconductor doping; silicon; thermal diffusion; 17 to 18 percent; 400 C; APCVD-PSG composition; CVD phosphosilicate glass; Cz-Si selective emitter PV devices; P2O5-SiO2; PSG; PSG diffusion source; RTA; Si:P; atmospheric pressure CVD; chemical vapor deposited PSG; high energy conversion efficiencies; low temperature CVD; photovoltaic devices; rapid thermal annealing; selective P diffusion; selective emitters; selectively diffused emitters formation; shallow n/sup +/p junctions; single step rapid thermal diffusion; submicron range; Chemical vapor deposition; Energy conversion; Furnaces; Glass; Photovoltaic systems; Rapid thermal annealing; Rapid thermal processing; Solar power generation; Surface resistance; Temperature;
Journal_Title :
Electron Device Letters, IEEE
