A fully planarized 4H-SiC trench MOS barrier Schottky (TMBS) rectifier

Author

Khemka, V. ; Ananthan, V. ; Chow, T.P.

Author_Institution

Digital DNA Labs., Motorola Inc., Mesa, AZ, USA

Volume

21

Issue

6

fYear

2000

fDate

6/1/2000 12:00:00 AM

Firstpage

286

Lastpage

288

Abstract

A fully planarized 4H-SiC trench MOS barrier Schottky (TMBS) rectifier has been designed, fabricated and characterized for the first time. The use of a TMBS structure helps improve the reverse leakage current by more than three orders of magnitude compared to that of a planar Schottky rectifier. We have achieved a low reverse leakage current density of 6/spl times/10/sup -6/ A/cm/sup 2/ and a low forward voltage drop of 1.75 V at 60 A/cm/sup 2/ for the TMBS rectifier. The static current-voltage (I-V) and switching characteristics of the TMBS rectifier have been measured at various temperatures. A barrier height of 1.0 eV and an ideality factor of 1.8 were extracted from the forward characteristics. The switching characteristics do not change with temperature indicating the essential absence of stored charge.

Keywords

MIS devices; Schottky diodes; leakage currents; power semiconductor diodes; silicon compounds; solid-state rectifiers; wide band gap semiconductors; 4H-SiC Schottky rectifier; SiC; forward voltage drop; fully planarized Schottky rectifier; ideality factor; reverse leakage current; static I-V characteristics; switching characteristics; trench MOS barrier Schottky rectifier; Boron; Current measurement; Leakage current; Low voltage; Photonic band gap; Rectifiers; Schottky diodes; Silicon carbide; Temperature measurement; Thermal conductivity;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.843152

Filename

843152