Thickness dependent gate oxide quality of thin thermal oxide grown on high temperature formed SiGe

Author

Wu, Y.H. ; Chin, Albert ; Chen, W.J.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

21

Issue

6

fYear

2000

fDate

6/1/2000 12:00:00 AM

Firstpage

289

Lastpage

291

Abstract

For thin oxides grown on high temperature formed Si/sub 0.3/Ge/sub 0.7/, the gate oxide quality is strongly dependent on oxide thickness and improves as thickness reduces from 50 to 30 /spl Aring/. The thinner 30 /spl Aring/ oxide has excellent quality as evidenced by the comparable leakage current, breakdown voltage, interface-trap density and charge-to-breakdown with conventional thermal oxide grown on Si. The achieved good oxide quality is due to the high temperature formed Si/sub 0.3/Ge/sub 0.7/ that is strain relaxed and stable during oxidation. The possible reason for strong thickness dependence may be due to the lower GeO/sub 2/ content formed in thinner 30 /spl Aring/ oxide rather than strain relaxation related rough surface or defects.

Keywords

Ge-Si alloys; dielectric thin films; interface states; leakage currents; semiconductor device breakdown; semiconductor device reliability; semiconductor-insulator boundaries; 30 to 50 A; SiGeO-Si/sub 0.3/Ge/sub 0.7/; breakdown voltage; charge-to-breakdown; high temperature formed SiGe; interface-trap density; leakage current; strain relaxation; thickness dependent gate oxide quality; thin thermal oxide; Capacitive sensors; Germanium silicon alloys; Leakage current; MOSFET circuits; Plasma temperature; Rough surfaces; Silicon germanium; Surface roughness; Temperature dependence; Voltage control;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.843153

Filename

843153