• DocumentCode
    1338451
  • Title

    Improved performance and reliability of N2O-grown oxynitride on 6H-SiC

  • Author

    Xu, J.P. ; Lai, P.T. ; Chan, C.L. ; Li, B. ; Cheng, Y.C.

  • Author_Institution
    Dept. of Solid State Electron., Huazhong Univ. of Sci. & Technol., Wuhan, China
  • Volume
    21
  • Issue
    6
  • fYear
    2000
  • fDate
    6/1/2000 12:00:00 AM
  • Firstpage
    298
  • Lastpage
    300
  • Abstract
    This letter reports, for the first time, N/sub 2/O-grown oxides on both n-type and p-type 6H-SiC wafers. It is demonstrated that the N/sub 2/O-grown technique leads to not only greatly improved SiC/SiO/sub 2/ interface and oxide qualities, but also considerably enhanced device reliabilities as compared to N/sub 2/O-nitrided and conventional thermally oxidized devices. These improvements are especially obvious for p-type SiC MOS devices, indicating that N/sub 2/O oxidation could be a promising technique for fabricating enhancement-type n-channel SiC MOSFETs.
  • Keywords
    MOS capacitors; MOSFET; capacitance; hot carriers; interface states; nitridation; oxidation; semiconductor device reliability; silicon compounds; wide band gap semiconductors; 6H-SiC wafers; MOS capacitors; N/sub 2/O; N/sub 2/O-grown oxides; N/sub 2/O-grown oxynitride reliability; Si-SiO/sub 2/; SiC; SiC/SiO/sub 2/ interface quality; SiON; enhanced device reliability; enhancement-type n-channel SiC MOSFET; high-frequency C-V curves; hot-carrier stress; n-type wafers; p-type SiC MOS devices; p-type wafers; Annealing; Epitaxial layers; Lead compounds; MOS capacitors; MOS devices; Oxidation; Silicon carbide; Substrates; Temperature; Thermal stresses;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.843156
  • Filename
    843156
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1338451