DocumentCode
1338487
Title
Geometric effect of multiple-bit soft errors induced by cosmic ray neutrons on DRAM´s
Author
Satoh, S. ; Tosaka, Y. ; Wender, S.A.
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
Volume
21
Issue
6
fYear
2000
fDate
6/1/2000 12:00:00 AM
Firstpage
310
Lastpage
312
Abstract
Although it has been shown that cosmic ray neutrons play an important role in soft error (SE) phenomena, some important issues remain to be clarified in neutron-induced SE phenomena. This letter reports the geometric effect of multiple-bit SE´s induced by neutrons. Multiple-bit SE´s in 16 Mb DRAM´s are investigated and their geometric effects on high reliability systems are discussed.
Keywords
DRAM chips; cosmic ray interactions; cosmic ray neutrons; integrated circuit reliability; neutron effects; 16 Mbit; DRAM; cosmic ray neutrons; geometric effect; high reliability systems; multiple-bit soft errors; soft error rate; Analytical models; Circuit simulation; Laboratories; Logic circuits; Neutrons; Particle beams; Random access memory; Semiconductor device measurement; Silicon; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.843160
Filename
843160
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