High performance sub-0.25 μm devices using ultrathin oxide-nitride-oxide gate dielectric formed with low pressure oxidation and chemical vapor deposition

Author

Ma, Y. ; Lee, J.L. ; Carroll, M.S. ; Lee, K.H.

Author_Institution

Bell Lab., Lucent Technol., Orlando, FL, USA

Volume

21

Issue

6

fYear

2000

fDate

6/1/2000 12:00:00 AM

Firstpage

316

Lastpage

318

Abstract

An ultra-thin, high reliability oxide-nitride-oxide (ONO) gate dielectric was formed using low pressure oxidation and chemical vapor deposition. A sub-0.25 μm device with high performance was fabricated for which the gate dielectric reliability was studied using both Fowler-Nordheim tunneling stress and hot carrier aging. The results from both techniques demonstrate that the device lifetime is longer than 100 years. Auger spectroscopy shows that there is about 9 at.% nitrogen at the SiO₂/Si interface. However, no transconductance degradation is observed.

Keywords

Auger electron spectra; MOSFET; carrier mobility; chemical vapour deposition; dielectric thin films; hot carriers; oxidation; semiconductor device measurement; semiconductor device reliability; tunnelling; 0.25 mum; 100 year; Auger spectroscopy; Fowler-Nordheim tunneling stress; MOSFET; NMOS devices; PMOS devices; SiO/sub 2/-Si; SiO/sub 2/-Si/sub 3/N/sub 4/-SiO/sub 2/; SiO/sub 2//Si interface; chemical vapor deposition; device lifetime; gate dielectric reliability; high performance sub-0.25 /spl mu/m devices; hot carrier aging; low pressure oxidation; transconductance; ultra-thin high reliability ONO gate dielectric; Aging; Chemical vapor deposition; Dielectric devices; Hot carriers; Nitrogen; Oxidation; Spectroscopy; Stress; Transconductance; Tunneling;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.843162

Filename

843162