DocumentCode :
1338550
Title :
A Compact RF MEMS Metal-Contact Switch and Switching Networks
Author :
Patel, Chirag D. ; Rebeiz, Gabriel M.
Author_Institution :
University of California at San Diego, La Jolla,
Volume :
22
Issue :
12
fYear :
2012
Firstpage :
642
Lastpage :
644
Abstract :
A compact RF MEMS metal-contact switch based on a tethered cantilever topology and orthogonal anchors is presented. The switch is a “medium-force” design capable of achieving a simulated contact force of 0.38–0.72 mN for actuation voltages of 90–100 V and a simulated restoring force of 0.46 mN in a 120 ,\\times, 160 \\mu {\\rm m}^{2} area. The pull-in and release voltages are 75 V and 70 V, respectively. In the down-state position, the switch resistance is 1–2 \\Omega with a Au/Ru hybrid contact. In the up-state, the capacitance is 16 fF, resulting in an isolation of 20 dB at 10 GHz and 9 dB at 40 GHz for an SPST configuration. For a series/shunt configuration, the switch achieves an isolation of 55 dB at 10 GHz and 35 dB at 40 GHz. Compact SP4T and SP6T switching networks are also implemented. The SP4T is 850 ,\\times, 530 \\mu {\\rm m}^{2} (850 ,\\times, 650 \\mu {\\rm m}^{2} with bias pads); the SP6T is 850 ,\\times, 730 \\mu {\\rm m}^{2} (850 ,\\times, 855 \\mu {\\rm m}^{2} with bias pads). Both designs achieve an isolation of \\sim 36~{\\rm dB} and an insertion loss of < 0.3 ~- \\rm dB} at 3 GHz.
Keywords :
Electrical resistance measurement; Metals; Micromechanical devices; Radio frequency; Switching circuits; Temperature measurement; Metal-contact; RF MEMS; switching networks;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2012.2226637
Filename :
6359803
Link To Document :
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