• DocumentCode
    1338603
  • Title

    Real-Time Soft-Error Testing Results of 45-nm, High-K Metal Gate, Bulk CMOS SRAMs

  • Author

    Seifert, Norbert ; Kirsch, Matthew

  • Author_Institution
    Intel Corp., Hillsboro, OR, USA
  • Volume
    59
  • Issue
    6
  • fYear
    2012
  • Firstpage
    2818
  • Lastpage
    2823
  • Abstract
    We report on soft error rates of 45-nm bulk CMOS SRAMs measured in real-time testing experiments. Results are consistent with accelerated testing and demonstrate that alpha-particle induced soft error rates are negligible.
  • Keywords
    CMOS memory circuits; SRAM chips; alpha-particle effects; high-k dielectric thin films; integrated circuit testing; particle beam diagnostics; radiation hardening (electronics); accelerated beam testing; alpha-particle induced soft error rates; bulk CMOS SRAMs; high-k metal gate; real-time soft-error testing results; Alpha particles; CMOS technology; Life testing; Neutrons; Particle beams; Real-time systems; Alpha particles; life testing; neutrons; radiation; real-time testing; single event; single event effect (SEE); soft error; soft error rate (SER);
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2012.2220858
  • Filename
    6359813
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1338603