DocumentCode
1338695
Title
Structural Analysis on Organic Thin-Film Transistor With Device Simulation
Author
Shim, Chang-Hoon ; Maruoka, Fumito ; Hattori, Reiji
Author_Institution
Dept. of Electron., Kyushu Univ., Fukuoka, Japan
Volume
57
Issue
1
fYear
2010
Firstpage
195
Lastpage
200
Abstract
A 2-D device simulation for organic thin-film transistors (OTFTs) was carried out to reveal the characteristic difference between staggered and planar structures. Assuming the OTFT with Schottky barrier contact, the staggered-structure TFT has more current flow, bigger field-effect mobility, and lower contact resistance than the planar structure. The simulation results indicate that the source electrode of the staggered structure has better ability to supply the current than that of the planar structure.
Keywords
Schottky barriers; thin film transistors; 2D device simulation; Schottky barrier contact; field-effect mobility; organic thin-film transistor; source electrode; staggered-structure TFT; structural analysis; Analytical models; Contact resistance; Current supplies; Displays; Electrodes; Organic thin film transistors; Schottky barriers; Semiconductor materials; Silicon; Thin film transistors; Contact resistance; device simulation; organic thin-film transistor (OTFT); planar structure; staggered structure;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2009.2035540
Filename
5339187
Link To Document