• DocumentCode
    1338748
  • Title

    Scalable Spin-Transfer Torque RAM Technology for Normally-Off Computing

  • Author

    Kawahara, T.

  • Author_Institution
    Life Sci. Res. Lab., Hitachi Ltd., Tokyo, Japan
  • Volume
    28
  • Issue
    1
  • fYear
    2011
  • Firstpage
    52
  • Lastpage
    63
  • Abstract
    Nonvolatile embedded memories may open the door to new computing paradigms based on "normally-off and instant-on" operation. This article covers recent trends of spin-transfer-torque RAM technology, an emerging class of nonvolatile memory, and discusses its impact on the different layers of computer system hierarchy.
  • Keywords
    embedded systems; low-power electronics; random-access storage; computer system hierarchy; nonvolatile embedded memory; normally-off computing; spin transfer torque RAM technology; 4F2 memory cell; Gbit-scale memory; SPRAM; TMR device; design and test; instant-on; multibit operation; nonvolatile RAM (NVRAM); normally-off; spin-transfer torque;
  • fLanguage
    English
  • Journal_Title
    Design & Test of Computers, IEEE
  • Publisher
    ieee
  • ISSN
    0740-7475
  • Type

    jour

  • DOI
    10.1109/MDT.2010.97
  • Filename
    5590232