DocumentCode
1338748
Title
Scalable Spin-Transfer Torque RAM Technology for Normally-Off Computing
Author
Kawahara, T.
Author_Institution
Life Sci. Res. Lab., Hitachi Ltd., Tokyo, Japan
Volume
28
Issue
1
fYear
2011
Firstpage
52
Lastpage
63
Abstract
Nonvolatile embedded memories may open the door to new computing paradigms based on "normally-off and instant-on" operation. This article covers recent trends of spin-transfer-torque RAM technology, an emerging class of nonvolatile memory, and discusses its impact on the different layers of computer system hierarchy.
Keywords
embedded systems; low-power electronics; random-access storage; computer system hierarchy; nonvolatile embedded memory; normally-off computing; spin transfer torque RAM technology; 4F2 memory cell; Gbit-scale memory; SPRAM; TMR device; design and test; instant-on; multibit operation; nonvolatile RAM (NVRAM); normally-off; spin-transfer torque;
fLanguage
English
Journal_Title
Design & Test of Computers, IEEE
Publisher
ieee
ISSN
0740-7475
Type
jour
DOI
10.1109/MDT.2010.97
Filename
5590232
Link To Document