DocumentCode :
1338748
Title :
Scalable Spin-Transfer Torque RAM Technology for Normally-Off Computing
Author :
Kawahara, T.
Author_Institution :
Life Sci. Res. Lab., Hitachi Ltd., Tokyo, Japan
Volume :
28
Issue :
1
fYear :
2011
Firstpage :
52
Lastpage :
63
Abstract :
Nonvolatile embedded memories may open the door to new computing paradigms based on "normally-off and instant-on" operation. This article covers recent trends of spin-transfer-torque RAM technology, an emerging class of nonvolatile memory, and discusses its impact on the different layers of computer system hierarchy.
Keywords :
embedded systems; low-power electronics; random-access storage; computer system hierarchy; nonvolatile embedded memory; normally-off computing; spin transfer torque RAM technology; 4F2 memory cell; Gbit-scale memory; SPRAM; TMR device; design and test; instant-on; multibit operation; nonvolatile RAM (NVRAM); normally-off; spin-transfer torque;
fLanguage :
English
Journal_Title :
Design & Test of Computers, IEEE
Publisher :
ieee
ISSN :
0740-7475
Type :
jour
DOI :
10.1109/MDT.2010.97
Filename :
5590232
Link To Document :
بازگشت