An Accurate Compact Analytical Model for the Drain Current of a TFET From Subthreshold to Strong Inversion

Author

Vishnoi, Rajat ; Kumar, M.J.

Author_Institution

Dept. of Electr. Eng., IIT Delhi, New Delhi, India

Volume

62

Issue

2

fYear

2015

fDate

Feb. 2015

Firstpage

478

Lastpage

484

Abstract

In this paper, we have developed a compact analytical model for the drain current of a silicon-on-insulator tunneling field-effect transistor. The model includes the effects of oxide thickness, body doping, drain voltage, and gate metal work function. The model calculates the drain current using a tangent line approximation method to integrate the tunneling generation rate in the source-body depletion region. The accuracy of the model is tested against 2-D numerical simulations. The model predicts the drain current accurately in both the ON state (strong inversion) as well as in the subthreshold region.

Keywords

field effect transistors; numerical analysis; semiconductor device models; semiconductor doping; silicon-on-insulator; tunnel transistors; 2D numerical simulations; TFET; body doping; drain current; drain voltage; gate metal work function; oxide thickness; silicon-on-insulator; source-body depletion region; subthreshold region; tangent line approximation method; tunneling field-effect transistor; tunneling generation rate; Analytical models; Approximation methods; Electric potential; Integrated circuit modeling; Mathematical model; Numerical models; Tunneling; 2-D modeling; OFF-state current; ON-state current; silicon on insulator (SOI); subthreshold slope (SS); tunneling field-effect transistor (TFET);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2381560

Filename

7006698