• DocumentCode
    1339103
  • Title

    Nanoelectronics [quantum electron devices]

  • Author

    Hartnagel, H.L. ; Richter, R. ; Grub, A.

  • Author_Institution
    Inst. fur Hochfrequenztech., Tech. Hochschule Darmstadt, Germany
  • Volume
    3
  • Issue
    3
  • fYear
    1991
  • fDate
    6/1/1991 12:00:00 AM
  • Firstpage
    119
  • Lastpage
    128
  • Abstract
    The dimensions of semiconductor devices can now be reduced to the point where quantum-mechanical effects must be considered in device performance. New device concepts have therefore been proposed, and already realised, in which quantum-mechanical effects are used to achieve increased electron mobilities or in which interference phenomena are utilised. At present, the major drawbacks of nanoelectronics are the technological problems of realising the devices. The emphasis of the paper is on new technological concepts for device realisation. Additionally, an overview of proposed and realised devices is given. Future advances in nanofabrication may come from the development of the scanning tunnelling microscope and related systems
  • Keywords
    quantum interference devices; quantum optics; semiconductor technology; device performance; dimensions; electron mobilities; interference phenomena; nanoelectronics; nanofabrication; quantum-mechanical effects; scanning tunnelling microscope; semiconductor devices;
  • fLanguage
    English
  • Journal_Title
    Electronics & Communication Engineering Journal
  • Publisher
    iet
  • ISSN
    0954-0695
  • Type

    jour

  • Filename
    84349