DocumentCode
1339103
Title
Nanoelectronics [quantum electron devices]
Author
Hartnagel, H.L. ; Richter, R. ; Grub, A.
Author_Institution
Inst. fur Hochfrequenztech., Tech. Hochschule Darmstadt, Germany
Volume
3
Issue
3
fYear
1991
fDate
6/1/1991 12:00:00 AM
Firstpage
119
Lastpage
128
Abstract
The dimensions of semiconductor devices can now be reduced to the point where quantum-mechanical effects must be considered in device performance. New device concepts have therefore been proposed, and already realised, in which quantum-mechanical effects are used to achieve increased electron mobilities or in which interference phenomena are utilised. At present, the major drawbacks of nanoelectronics are the technological problems of realising the devices. The emphasis of the paper is on new technological concepts for device realisation. Additionally, an overview of proposed and realised devices is given. Future advances in nanofabrication may come from the development of the scanning tunnelling microscope and related systems
Keywords
quantum interference devices; quantum optics; semiconductor technology; device performance; dimensions; electron mobilities; interference phenomena; nanoelectronics; nanofabrication; quantum-mechanical effects; scanning tunnelling microscope; semiconductor devices;
fLanguage
English
Journal_Title
Electronics & Communication Engineering Journal
Publisher
iet
ISSN
0954-0695
Type
jour
Filename
84349
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