• DocumentCode
    1339450
  • Title

    Micromachined patch antennas

  • Author

    Papapolymerou, Ioannis ; Drayton, Rhonda Franklin ; Katehi, Linda P B

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
  • Volume
    46
  • Issue
    2
  • fYear
    1998
  • fDate
    2/1/1998 12:00:00 AM
  • Firstpage
    275
  • Lastpage
    283
  • Abstract
    This paper presents the use of selective lateral etching based on micromachining techniques to enhance the performance of rectangular microstrip patch antennas printed on high-index wafers such as silicon, GaAs, and InP. Micromachined patch antennas on Si substrates have shown superior performance over conventional designs where the bandwidth and the efficiency have increased by as much as 64% and 28%, respectively. In this work, the silicon material is removed laterally underneath the patch antenna to produce a cavity that consists of a mixture of air and substrate with equal or unequal thicknesses. Characterization of the micromachined patch antenna is presented herein and includes a discussion on the bandwidth improvements, radiation patterns, and efficiency of the patch. In addition, antenna placement on the reduced index cavity with respect to the high-index substrate is described to achieve efficiency improvements over conventional patch antennas
  • Keywords
    antenna radiation patterns; etching; micromachining; microstrip antennas; GaAs; GaAs surface; InP; InP surface; Si; Si substrates; antenna placement; bandwidth; characterization; efficiency; high-index substrate; high-index wafers; micromachined patch antennas; performance; printed antennas; radiation patterns; rectangular microstrip patch antennas; reduced index cavity; selective lateral etching; Antenna radiation patterns; Bandwidth; Costs; Dielectric materials; Etching; Gallium arsenide; Microstrip antennas; Patch antennas; Silicon; Surface waves;
  • fLanguage
    English
  • Journal_Title
    Antennas and Propagation, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-926X
  • Type

    jour

  • DOI
    10.1109/8.660973
  • Filename
    660973