Enhancing Signal and Power Integrity Using Double Sided Silicon Interposer

Author

Sridharan, Vivek ; Swaminathan, Madhavan ; Bandyopadhyay, Tapobrata

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

Volume

21

Issue

11

fYear

2011

Firstpage

598

Lastpage

600

Abstract

A novel double sided silicon interposer for low impedance power delivery is presented. In this letter, a model for power ground planes in inhomogeneous dielectrics with conductive subsections using the multi-layered finite difference method (M-FDM) is presented. Benefits of the silicon interposer in mitigating signal integrity issues arising due to return path discontinuities (RPDs) are also discussed for the first time along with a comparison to glass interposer.

Keywords

dielectric properties; elemental semiconductors; finite difference methods; power semiconductor devices; silicon; M-FDM; Si; conductive subsections; double sided silicon interposer; glass interposer; inhomogeneous dielectrics; low impedance power delivery; multilayered finite difference method; power ground planes; power integrity enhancement; return path discontinuities; signal integrity enhancement; Finite difference methods; Glass; Insertion loss; Jitter; Polymers; Power generation; Signal analysis; Multi-layered finite difference method (M-FDM); power delivery; power planes; return path discontinuity (RPD); signal integrity; silicon interposer;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2011.2169239

Filename

6034541