Title :
Improved frequency tripler with integrated single-barrier varactor
Author :
Meola, R. ; Freyer, J. ; Claassen, M.
Author_Institution :
Lehrstuhl fur Allgemeine Elektrotechnik und Angewandte Elektronik, Tech. Univ. Munchen, Germany
fDate :
4/27/2000 12:00:00 AM
Abstract :
A monolithically integrated frequency tripler on semi-insulating GaAs substrate with a 210 GHz output frequency is presented. The measured conversion efficiency using a GaAs-GaAlAs single-barrier varactor is 13.5%, with an output power of >10 mW
Keywords :
III-V semiconductors; MIMIC; aluminium compounds; frequency multipliers; gallium arsenide; impedance matching; microstrip circuits; millimetre wave diodes; millimetre wave frequency convertors; varactors; 10 mW; 13.5 percent; 210 GHz; 70 GHz; EHF; GaAs-GaAlAs; GaAs-GaAlAs varactor; MM-wave IC; conversion efficiency; frequency tripler; integrated single-barrier varactor; monolithically integrated frequency tripler; semi-insulating GaAs substrate; waveguide mount;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000618
