Title :
High detectivity ZnSe-based Schottky barrier photodetectors for blue and near-ultraviolet spectral range
Author :
Vigué, F. ; de Mierry, P. ; Faurie, J.P. ; Monroy, E. ; Calle, F. ; Munoz, Eugenio
Author_Institution :
Centre de Recherche sur l´´Hetero-Epitaxie et ses Applications, CNRS, Valbonne, France
fDate :
4/27/2000 12:00:00 AM
Abstract :
A characterisation of ZnSe-based Schottky barrier photodetectors grown by molecular beam epitaxy is presented. High quality diodes exhibiting a high responsivity of 0.10 A/W at 455 nm and a sharp cut-off of three to four orders of magnitude have been fabricated. A detectivity of 1.4×1010 mHz 1/2 W-1 has been obtained for a structure with a 5 mm2 area operating at -3.5 V bias. These results highlight the potential of ZnSe in blue and near-ultraviolet light detection
Keywords :
II-VI semiconductors; Schottky diodes; molecular beam epitaxial growth; photodetectors; ultraviolet detectors; zinc compounds; -3.5 V; 455 nm; ZnSe; ZnSe Schottky barrier photodetector; blue light detection; cut-off wavelength; detectivity; molecular beam epitaxy; near-ultraviolet light detection; responsivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000600
