• DocumentCode
    1340338
  • Title

    An Ultra-Low-Power MMIC Amplifier Using 50-nm \\delta -Doped \\hbox {In}_{0.52}\\hbox {Al}_{0.48}\\hbox </h1></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><h2 class='mb-0 fw-semibold'>Chi-Jeon Hwang ; Lok, L.B. ; Chong, H.M.H. ; Holland, Martin ; Thayne, I.G. ; Elgaid, K.</h2></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author_Institution</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Volume</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>31</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Issue</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>11</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fYear</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>2010</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Firstpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>1230</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Lastpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>1232</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Abstract</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>An ultra-low-power monolithic amplifier using 50-nm gate-length GaAs metamorphic high-electron-mobility transistor (MHEMT) has been designed and fabricated by a coplanar waveguide monolithic microwave integrated circuit process. A double (5-doped In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.53</sub>Ga<sub>0.47</sub>As MHEMT technology with optimal doping profiles was used to achieve both ultra-low dc power consumption and good dynamic-range performance. The single-stage amplifier operates in the 24-GHz band and shows typical gain of 7.2 dB, ±0.5 dB bandwidth of 1.2 GHz, return losses better than 9 dB, and input IP<sub>3</sub> (IIP<sub>3</sub>) of +3 dBm while consuming only 0.9 mW of dc power. These experimental results demonstrate the outstanding potential of MHEMT technology for ultra-low-power applications such as wireless sensor networks.</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>III-V semiconductors; MMIC amplifiers; coplanar waveguides; gallium arsenide; high electron mobility transistors; indium compounds; low-power electronics; semiconductor doping; In<sub>0.52</sub>Al<sub>0.48</sub>As-In<sub>0.53</sub>Ga<sub>0.47</sub>As; bandwidth 1.2 GHz; coplanar waveguide monolithic microwave integrated circuit; frequency 24 GHz; gain 7.2 dB; metamorphic HEMT; metamorphic high-electron-mobility transistor; monolithic amplifier; optimal doping profile; ultra-low-power MMIC amplifier; Gallium arsenide; Logic gates; MMICs; Noise; Performance evaluation; Power demand; mHEMTs; <formula formulatype=$delta$-doped $hbox{In}_{0.52}hbox{Al}_{0.48}hbox{As/In}_{0.53}hbox{Ga}_{0.47}hbox{As}$; Coplanar waveguide; metamorphic high-electron-mobility transistor (MHEMT); monolithic microwave integrated circuit (MMIC); ultra-low power consumption;

  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2010.2070484
  • Filename
    5593189
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1340338