DocumentCode :
1340405
Title :
Capacitor-less low-dropout regulator with slew-rate-enhanced circuit
Author :
Tsai, C.H. ; Wang, Jessie Hui
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume :
5
Issue :
5
fYear :
2011
fDate :
9/1/2011 12:00:00 AM
Firstpage :
384
Lastpage :
391
Abstract :
A capacitor-less low-power low-dropout regulator (LDR) with a slew-rate-enhanced circuit (SRE) was proposed. The SRE uses six transistors to constitute two comparators and two auxiliary transistors. The comparators sense the variation of load current to control one of the auxiliary transistors that generate a large current to charge or discharge the gate capacitor of the power transistor; thus SRE increases the slew-rate at the gate of the power transistor. The quiescent current of the LDR remains 18 A at the steady state because the auxiliary transistors work at the cut-off region to reduce power consumption. When load current changes between 0.1 and 100 mA, the variation of the output voltage of the LDR is improved from 675 to 300 mV.
Keywords :
capacitors; comparators (circuits); power transistors; SRE circuit; auxiliary power transistor control; capacitor-less low-power LDR; capacitor-less low-power low-dropout regulator; comparator; current 0.1 mA to 100 mA; current 18 muA; gate capacitor; load current; power consumption; slew-rate-enhanced circuit; voltage 675 mV to 300 mV;
fLanguage :
English
Journal_Title :
Circuits, Devices & Systems, IET
Publisher :
iet
ISSN :
1751-858X
Type :
jour
DOI :
10.1049/iet-cds.2010.0309
Filename :
6034867
Link To Document :
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