Title :
Analytical model for current transport in organic thin-film transistors
Author_Institution :
Dept. of Electr. & Comput. Eng., Victoria Univ., BC, Canada
fDate :
4/1/2000 12:00:00 AM
Abstract :
The I-V characteristics of organic thin-film transistors are examined and a model is proposed that could explain the behaviour of the drain current in the `subthreshold´ mode. The model proposes that an injection current at the source dominates the `subthreshold´ current at positive gate voltage and the magnitude of this current is modulated by space charge residing in the bulk of the thin film. It is further proposed that a guard ring around the source could minimise the injection current
Keywords :
MOSFET; electric current; organic semiconductors; semiconductor device models; space charge; thin film transistors; I-V characteristics; analytical model; current transport; drain current; injection current minimisation; organic TFT; organic thin-film transistors; positive gate voltage; source guard ring; space charge; subthreshold current; subthreshold mode;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:20000028
