DocumentCode
1340823
Title
Analytical model for current transport in organic thin-film transistors
Author
Kwok, H.L.
Author_Institution
Dept. of Electr. & Comput. Eng., Victoria Univ., BC, Canada
Volume
147
Issue
2
fYear
2000
fDate
4/1/2000 12:00:00 AM
Firstpage
125
Lastpage
128
Abstract
The I-V characteristics of organic thin-film transistors are examined and a model is proposed that could explain the behaviour of the drain current in the `subthreshold´ mode. The model proposes that an injection current at the source dominates the `subthreshold´ current at positive gate voltage and the magnitude of this current is modulated by space charge residing in the bulk of the thin film. It is further proposed that a guard ring around the source could minimise the injection current
Keywords
MOSFET; electric current; organic semiconductors; semiconductor device models; space charge; thin film transistors; I-V characteristics; analytical model; current transport; drain current; injection current minimisation; organic TFT; organic thin-film transistors; positive gate voltage; source guard ring; space charge; subthreshold current; subthreshold mode;
fLanguage
English
Journal_Title
Circuits, Devices and Systems, IEE Proceedings -
Publisher
iet
ISSN
1350-2409
Type
jour
DOI
10.1049/ip-cds:20000028
Filename
844455
Link To Document