Electrostatic adhesion testing of thin metallizations

A novel technique has been developed for the adhesion testing of thin metallizations, which obviates mechanical contact with the metallization. This method employs electrostatic forces to generate high tensile stresses normal to the surface of the film. The mechanics of the test are described in the context of a constant-pressure blister test. The quantitative results are consistent with a flaw-mediated interfacial failure and are interpreted using Weibull statistics. Tests on Cu and Al(2%Cu) electronic metallizations on silicon quantitatively distinguish both a characteristic adhesion strength, 1.0 MPa for Cu on Si and 1.6 MPa for Al(2%Cu) on Si, and Weibull modulus, 5.7 for Cu on Si and 7.4 for Al(2%Cu) on Si.