DocumentCode
1340856
Title
A>400 GHz fmax transferred-substrate heterojunction bipolar transistor IC technology
Author
Lee, Q. ; Agarwal, B. ; Mensa, D. ; Pullela, R. ; Guthrie, J. ; Samoska, L. ; Rodwell, M.J.W.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Volume
19
Issue
3
fYear
1998
fDate
3/1/1998 12:00:00 AM
Firstpage
77
Lastpage
79
Abstract
We report transferred-substrate AlInAs/GaInAs bipolar transistors. A device having a 0.6 μm×25 μm emitter and a 0.8 μm×29 μm collector exhibited f/sub /spl tau//=134 GHz and fmax>400 GHz. A device with a 0.6 μm×25 μm emitter and a 1.8 μm×29 μm collector exhibited 400 GHz fmax 164 GHz f/sub /spl tau//. The improvement in fmax over previous transferred-substrate HBT´s is due to improved base Ohmic contacts, narrower emitter-base and collector-base junction areas, and slightly reduced transit times. The transferred-substrate fabrication process provides electroplated gold thermal vias for transistor heat-sinking and a microstrip wiring environment on a low dielectric constant polymer substrate.
Keywords
III-V semiconductors; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated circuit technology; 400 GHz; AlInAs-GaInAs; base Ohmic contact; collector-base junction area; electroplated gold thermal via; emitter-base junction area; heterojunction bipolar transistor IC technology; low dielectric constant polymer substrate; microstrip wiring; transferred-substrate fabrication; transistor heat-sinking; transit time; Bipolar transistors; Dielectric constant; Dielectric substrates; Fabrication; Gold; Heat transfer; Microstrip; Ohmic contacts; Polymers; Wiring;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.661170
Filename
661170
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