Flip-chip bonded hybrid CMOS/SEED optoelectronic smart pixels

Author

Chen, H.D. ; Liang, K. ; Zeng, Q.M. ; Li, X.J. ; Chen, Z.B. ; Du, Y. ; Wu, R.H.

Author_Institution

Inst. of Semicond., Acad. Sinica, Beijing, China

Volume

147

Issue

1

fYear

2000

fDate

2/1/2000 12:00:00 AM

Firstpage

2

Lastpage

6

Abstract

Hybrid integration of GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays are demonstrated flip-chip bonded directly onto 1 μm silicon CMOS circuits. The GaAs-AlGaAs MQW devices are designed for 850 nm operation. Some devices are used as input light detectors and others serve as output light modulators. The measurement results under applied biases show good optoelectronic characteristics of elements in SEED arrays. Nearly the same reflection spectrum is obtained for the different devices at an array and the contrast ratio is more than 1.2:1 after flip-chip bonding and packaging. The transimpedance receiver-transmitter circuit can be operated at a frequency of 300 MHz

Keywords

CMOS integrated circuits; III-V semiconductors; SEEDs; aluminium compounds; electro-optical modulation; flip-chip devices; gallium arsenide; integrated optoelectronics; packaging; semiconductor quantum wells; smart pixels; GaAs-AlGaAs; GaAs-AlGaAs MQW SEED arrays; GaAs/AlGaAs MQW devices; GaAs/AlGaAs multiple quantum well self electro-optic effect device; flip-chip bonded hybrid CMOS/SEED optoelectronic smart pixels; flip-chip bonding; good optoelectronic characteristics; hybrid integration; input light detectors; output light modulators; packaging; reflection spectrum; silicon CMOS circuits; transimpedance receiver-transmitter circuit;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:20000380

Filename

844460