Temperature characteristics of near-infrared (1.7 micron), resonant cavity light-emitting diodes

Author

Poole, B.M. ; Singer, K.E. ; Missous, M.

Author_Institution

Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK

Volume

147

Issue

1

fYear

2000

fDate

2/1/2000 12:00:00 AM

Firstpage

22

Lastpage

26

Abstract

The design and operation of a near infra-red resonant cavity light-emitting diode operating at 1.7 microns with a 16 nm linewidth is described. The structure is based on a wafer-bonded combination of InGaAs-InAlAs-InP quantum well emitter and an AlAs-GaAs distributed Bragg reflector. Detailed temperature characteristics over a range from 80 to 373 K are presented. The temperature dependence of the main cavity mode emission wavelength is shown to be 0.15 nm/K. The intensity is found to increase with temperature from 80 to 325 K and thereafter decrease. There is a 20 degree range in which the intensity is constant within approximately 5%. A model is suggested for this behaviour

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared sources; light emitting diodes; optical design techniques; optical resonators; semiconductor quantum wells; 1.7 mum; 80 to 325 K; 80 to 373 K; AlAs-GaAs; AlAs-GaAs distributed Bragg reflecto; InGaAs-InAlAs-InP; InGaAs-InAlAs-InP quantum well emitter; LED; linewidth; main cavity mode emission wavelength; near-IR resonant cavity light-emitting diodes; temperature characteristics; temperature dependence; wafer-bonded combination;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:20000301

Filename

844464