DocumentCode :
1341099
Title :
A high-efficiency CMOS voltage doubler
Author :
Favrat, Pierre ; Deval, Philippe ; Declercq, Michel J.
Author_Institution :
Electron. Lab., Fed. Inst. of Technol., Lausanne, Switzerland
Volume :
33
Issue :
3
fYear :
1998
fDate :
3/1/1998 12:00:00 AM
Firstpage :
410
Lastpage :
416
Abstract :
A charge pump cell is used to make a voltage doubler using improved serial switches. A complete power efficiency theory is presented which fits the measurements. The importance of capacitors is shown with plots of power efficiency versus load and stray capacitors. Several problems arising at low voltage or high frequency are developed and some optimizations are presented. The substrate current is totally suppressed by the technique of bulk commutation. A power efficiency of 95% has been reached using external capacitors. A fully integrated charge pump is also presented and shows a maximum power efficiency of 75%
Keywords :
CMOS analogue integrated circuits; DC-DC power convertors; commutation; voltage multipliers; 75 to 95 percent; CMOS voltage doubler; bulk commutation; charge pump cell; power efficiency theory; serial switches; stray capacitors; substrate current; Associate members; CMOS technology; Capacitors; Charge pumps; Circuits; Frequency; Low voltage; MOSFETs; Power measurement; Switches;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.661206
Filename :
661206
Link To Document :
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