A strained-layer InGaAs-GaAs asymmetric cladding gain-coupled DFB laser with titanium surface gratings by metalorganic chemical vapor deposition

Author

Osowski, M.L. ; Panepucci, R. ; Adesida, I. ; Coleman, J.J.

Author_Institution

Microelectron. Lab., Illinois Univ., Urbana, IL, USA

Volume

9

Issue

4

fYear

1997

fDate

4/1/1997 12:00:00 AM

Firstpage

422

Lastpage

424

Abstract

A single growth step ridge waveguide InGaAs-GaAs distributed feedback (DFB) QW laser with second-order Ti surface gratings is described. The Ti gratings introduce a periodic variation of the loss in the cavity to promote single frequency emission. The device operates on single longitudinal and lateral modes, with a threshold current of 27.9 mA and more than 30 dB of side-mode suppression.

Keywords

III-V semiconductors; claddings; diffraction gratings; distributed feedback lasers; gallium arsenide; indium compounds; laser cavity resonators; laser frequency stability; laser modes; optical couplers; quantum well lasers; ridge waveguides; semiconductor growth; symmetry; vapour phase epitaxial growth; waveguide lasers; 27.9 mA; InGaAs-GaAs; Ti; metalorganic chemical vapor deposition; periodic variation; quantum well lasers; second-order Ti surface gratings; side-mode suppression; single frequency emission; single growth step ridge waveguide InGaAs-GaAs DFB laser; single lateral modes; single longitudinal modes; strained-layer InGaAs-GaAs asymmetric cladding gain-coupled DFB laser; threshold current; titanium surface gratings; Chemical lasers; Chemical vapor deposition; Distributed feedback devices; Gratings; Laser feedback; Laser modes; Surface emitting lasers; Surface waves; Titanium; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.559375

Filename

559375