Title :
Optimization of Indirectly-Heated Type Microwave Power Sensors Based on GaAs Micromachining
Author :
Wang, De Bo ; Liao, Xiao Ping ; Liu, Tong
Author_Institution :
Key Lab. of MEMS of the Minist. of Educaiton, Southeast Univ., Nanjing, China
fDate :
5/1/2012 12:00:00 AM
Abstract :
In this paper, the indirectly-heated type microwave power sensors based on GaAs micromachining are optimized to obtain a reasonable microstructure dimension and achieve the compatibility of miniaturization with high performance. The thermal properties and the microwave properties of microwave power sensors are researched. The fabrication is divided into a front side and a back side processing of GaAs. The matching characteristics and the sensitivity characteristics of microwave power sensors are measured. With a tradeoff consideration between the miniaturization and the high performance, a reasonable microstructure dimension of the microwave power sensor is obtained. This optimized power sensor has very good RF-dc linearity, and the response time is about 6 ms.
Keywords :
gallium arsenide; micromachining; microsensors; microwave detectors; GaAs; RF-DC linearity; back side processing; front side processing; indirectly-heated type microwave power sensor optimization; matching characteristics; micromachining; microwave property; reasonable microstructure dimension; sensitivity characteristics; thermal property; Electromagnetic heating; Gallium arsenide; Resistors; Sensitivity; Sensor phenomena and characterization; Thermal sensors; GaAs micromachining; indirectly-heated type; optimization; power sensor;
Journal_Title :
Sensors Journal, IEEE
DOI :
10.1109/JSEN.2011.2170677
